منابع مشابه
Spin dependent recombination in F&doped silicon p-n junctions
Electrically detected magnetic resonance experiments showing spin dependent recombination in commercial p-n diodes are presented. The observed anisotropy in the g values along with the marked shift from the free electron g-value point to a metal-vacancy complex. Deep level transient spectroscopy reveals the presence of the Pt acceptor level (O/ ) at EC 0.23 eV and the donor level ( + 10) at E, ...
متن کاملControlled Doping Methods for Radial p/n Junctions in Silicon
R. Elbersen, A. Milbrat, Prof. J. Huskens Molecular Nanofabrication MESA+ Institute for Nanotechnology University of Twente P.O. Box 217. 7500 , AE , Enschede , The Netherlands E-mail: [email protected] R. Elbersen, Dr. R. M. Tiggelaar, Prof. H. Gardeniers Mesoscale Chemical Systems MESA+ Institute for Nanotechnology University of Twente P.O. Box 217. 7500 , AE , Enschede , The Netherlands E...
متن کاملDense nanoimprinted silicon nanowire arrays with passivated axial p-i-n junctions for photovoltaic applications
junctions for photovoltaic applications Peng Zhang, Pei Liu, Stylianos Siontas, A. Zaslavsky, D. Pacifici, Jong-Yoon Ha, S. Krylyuk, and A. V. Davydov Department of Physics and School of Engineering, Brown University, Providence, Rhode Island 02912, USA Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742, USA Material Measurement Labor...
متن کاملTemperature-Dependent Asymmetry of Anisotropic Magnetoresistance in Silicon p-n Junctions
We report a large but asymmetric magnetoresistance in silicon p-n junctions, which contrasts with the fact of magnetoresistance being symmetric in magnetic metals and semiconductors. With temperature decreasing from 293 K to 100 K, the magnetoresistance sharply increases from 50% to 150% under a magnetic field of 2 T. At the same time, an asymmetric magnetoresistance, which manifests itself as ...
متن کاملAxial p-n junctions realized in silicon nanowires by ion implantation.
The electrical properties of vertically aligned silicon nanowires doped by ion implantation are studied in this paper by a combination of electron beam-induced current imaging and two terminal current-voltage measurements. By varying the implantation parameters in several process steps, uniform p- and n-doping profiles as well as p-n junctions along the nanowire axis are realized. The effective...
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ژورنال
عنوان ژورنال: RADIOISOTOPES
سال: 1974
ISSN: 1884-4111,0033-8303
DOI: 10.3769/radioisotopes.23.5_282